Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon. Its chemical formula is SiC. Since the late 19th century silicon carbide has been an important material for sandpapers, grinding wheels, and cutting tools. More
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Silicon Carbide (SiC) is typically fused using the so-called Acheson process. It is a chemical compound of silicon and carbon. Through careful separation of the molten SiC, different qualities are obtained. Silicon Carbide is extremely hard, chemically inert, heat
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Ceramic and Metal Foams - Ultramet
Open-cell silicon carbide foam showing uniform pore structure Individual foam ligaments showing uniform silicon carbide coating (gray areas) over carbon core (black triangular areas) Foam-core sandwich structure in which fully dense silicon carbide facesheets are integrally bonded to 80-90 vol% porous, open-cell silicon carbide foam (both 5x).
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A method of making a dense silicon carbide ceramic is disclosed involving the steps of homogeneously dispersing silicon carbide with a sufficient amount of a boron containing additive and a carbonaceous additive, forming the powder mixture into a shaped green
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High strength reaction-bonded silicon carbide ceramics was successfully produced by reducing the amount of residual silicon and the silicon pocket size with carbon black as an additional carbon source. A prototype of wafer carrier was also produced in near-net
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Porous Silicon Carbide Sintered Substrates for High …
Silicon carbide (SiC) porous substrates are prepared by pressureless sintering of SiC powders under an inert atmosphere of argon. The porous SiC substrates were characterized by measuring their porosity, pore size distribution, surface characteristics, and structure. Their transport characteristics were investigated using N2 and He as the test gases. Three different starting powders and four
Heat Exchangers and Components in Graphite and Silicon Carbide
universal corrosion resistance silicon carbide is an excellent material for the design of heat exchangers and other process equipment. Regarding its complete lack of ductility and other mechanical treatment it is very different from any metallic ma-terials.
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Hexoloy® SG SiC Material Hexoloy® SG silicon carbide is a unique electrically conductive analog of sintered silicon carbide. The Hexoloy SG grade offers a wide variety of desirable properties in one package, including: Excellent hardness Corrosion resistance
Diatomic carbon - Wikipedia
Diatomic carbon (systematically named dicarbon and 1λ2,2λ2-ethene), is a green, gaseous inorganic chemical with the chemical formula C=C (also written [C2] or C2. It is kinetically unstable at aient temperature and pressure, being removed through autopolymerisation. It occurs in carbon vapor, for example in electric arcs; in comets
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Silicon carbide (SiC) is a synthetic, semiconducting fine ceramic that excels in a wide cross-section of industrial markets. Manufacturers benefit from an eclectic offering of silicon carbide grades due to the availability of both high-density and open porous structures.
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Silicon carbide is a chemical compound which is made up of silicon and carbon. It helps to improve the efficiency of a semiconductor device also resists from radiation and provides high power efficiency. It is now being used in the semiconductor industry though in
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ICSC 1061 - SILICON CARBIDE (non-fibrous)
This card does not apply to silicon carbide in "fibrous" or "whisker" form. There is evidence of fibrosis in mixed dust situations, the risk of which is enhanced in persons with tuberculosis. There is no evidence that silicon carbide (non-fibrous) causes fibrosis in the absence of other dusts.