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Silicon Carbide (SiC) has electronic and physical properties that offers superior performance devices for high power appliions. It is also used as a substrate to grow high-quality Gallium Nitride (GaN) enabling fast switching, high power RF devices. SiC may be
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With the nonstop introduction of new internet of things devices and solutions, mobile power has become an increasingly prevalent topic; specifically, energy storage. To explore this topic, Infineon has put together a webinar on the topic of energy storage systems, and how a silicon carbide-based, multi-modular approach might be the trend most worth paying attention […]
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The Properties and Uses of Silicon Metal In 1907, the first light emitting diode (LED) was created by applying voltage to a silicon carbide crystal. Through the 1930s silicon use grew with the development of new chemical products, including silanes and silicones.
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NITRIDE BONDED SILICON CARBIDE (NSIC) Analogue to RSIC this is also an open porous material with approx. 12 to 15% porosity. During a nitride process in which non-shrinking components are able to be manufactured, a green body made of SIC is nitrided in a nitrogenous atmosphere at 1500 °C.
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Silicon Carbide Biotechnology - 2nd Edition
Silicon Carbide Biotechnology: A Biocompatible Semiconductor for Advanced Biomedical Devices and Appliions, Second Edition, provides the latest information on this wide-band-gap semiconductor material that the body does not reject as a foreign (i.e., not organic) material and its potential to further advance biomedical appliions.
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Researchers say silicon photonics—optical circuits based on silicon chips—are one of the leading platforms for such technologies, thanks to their compatibility with existing microelectronics. “We’ve seen an explosion of growth in silicon photonic technologies the past few of years,” said Peter Rakich, an associate professor of applied physics at Yale who led the research.
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